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 82C82
March 1997
CMOS Octal Latching Bus Driver
Description
The Intersil 82C82 is a high performance CMOS Octal Latching Buffer manufactured using a self-aligned silicon gate CMOS process (Scaled SAJI IV). The 82C82 provides an eight-bit parallel latch/buffer in a 20 pin package. The active high strobe (STB) input allows transparent transfer of data and latches data on the negative transition of this signal. The active low output enable (OE) permits simple interface to state-of-the-art microprocessor systems.
Features
* Full Eight-Bit Parallel Latching Buffer * Bipolar 8282 Compatible * Three-State Noninverting Outputs * Propagation Delay . . . . . . . . . . . . . . . . . . . . . 35ns Max. * Gated Inputs: - Reduce Operating Power - Eliminate the Need for Pull-Up Resistors * Single 5V Power Supply * Low Power Operation . . . . . . . . . . . . . . . ICCSB = 10A * Operating Temperature Ranges - C82C82 . . . . . . . . . . . . . . . . . . . . . . . . . .0oC to +70oC - I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC - M82C82 . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
Ordering Information
PART NUMBER CP82C82 IP82C82 CS82C82 IS82C82 CD82C82 ID82C82 MD82C82/B 8406701RA MR82C82/B 84067012A TEMP. RANGE 0oC to +70oC -40oC to +85oC 0oC to +70oC -40oC to +85oC 0oC to +70oC -40oC to +85oC -55oC to +125oC SMD # -55oC to +125oC 20 Pad CLCC SMD # J20.A 20 Ld PLCC N20.35 PACKAGE 20 Ld PDIP PKG. NO. E20.3
20 Ld CERDIP F20.3
Pinouts
82C82 (PDIP, CERDIP) TOP VIEW 82C82 (PLCC, CLCC) TOP VIEW
DI2 DI1 DI0 DO0 VCC STB X H H DI3 4 DI4 5 DI5 6 DI6 7 DI7 8 18 DO1 17 DO2 16 DO3 15 DO4 14 DO5 H L X
TRUTH TABLE
OE H L L L DI X L H X DO Hi-Z L H
3 DI0 DI1 DI2 DI3 DI4 DI5 DI6 DI7 OE 1 2 3 4 5 6 7 8 9 20 VCC 19 DO0 18 DO1 17 DO2 16 DO3 15 DO4 14 DO5 13 DO6 12 DO7 11 STB
2
1
20
19
= Logic One = Logic Zero = Don't Care = Latched to Value of Last Data Hi-Z = High Impedance = Neg. Transition
PIN NAMES
9 OE 10 GND 11 STB 12 DO7 13 DO6
GND 10
PIN
DI0-DI7 DO0-DO7 STB OE
DESCRIPTION
Data Input Pins Data Output Pins Active High Strobe Active Low Output Enable
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
2975.1
4-274
82C82 Functional Diagram
DIO DQ CLK DO0
DI1 DI2 DI3 DI4 DI5 DI6 DI7
DO1 DO2 DO3 DO4 DO5 DO6 DO7
STB
OE
Gated Inputs
During normal system operation of a latch, signals on the bus at the device inputs will become high impedance or make transitions unrelated to the operation of the latch. These unrelated input transitions switch the input circuitry and typically cause an increase in power dissipation in CMOS devices by creating a low resistance path between VCC and GND when the signal is at or near the input switching threshold. Additionally, if the driving signal becomes high impedance ("float" condition), it could create an indeterminate logic state at the input and cause a disruption in device operation. The Intersil 82C8X Series of bus drivers eliminates these conditions by turning off data inputs when data is latched (STB = logic zero for the 82C82/83H) and when the device is disabled (OE = logic one for 82C86H/87H). These gated inputs disconnect the input circuitry from the VCC and ground power supply pins by turning off the upper P-channel and lower Nchannel (see Figures 1, 2). No new current flow from VCC to GND occurs during input transitions and invalid logic states from floating inputs are not transmitted. The next stage is held to a valid logic level internal to the device. DC input voltage levels can also cause an increase in ICC if these input levels approach the minimum VIH or maximum VIL conditions. This is due to the operation of the input circuitry in its linear operating region (partially conducting state). The 82C8X series gated inputs mean that this condition will occur only during the time the device is in the trans parent mode (STB = logic one). ICC remains below the maximum ICC standby specification of l0mA during the time inputs are disabled, thereby, greatly reducing the average power dissipation of the 82C8X series devices Typical 82C82 System Example In a typical 80C86/88 system, the 82C82 is used to latch multiplexed addresses and the STB input is driven by ALE (Address Latch Enable) (see Figure 3). The high pulse width of ALE is approximately 100ns with a bus cycle time of 800ns (80C86/88 at 5MHz). The 82C82 inputs are active only 12.5% of the bus cycle time. Average power dissipation related to input transitioning is reduced by this factor also.
VCC VCC P P OE STB DATA IN N N N N N P INTERNAL DATA DATA IN VCC N P P INTERNAL DATA VCC P
FIGURE 16. 82C82/83H
FIGURE 17. 82C86H/87H GATED INPUTS
4-275
82C82 Application Information
Decoupling Capacitors The transient current required to charge and discharge the 300pF load capacitance specified in the 82C82 data sheet is determined by:
I = C L (dv/dt) (EQ. 1)
where tR = 20ns, VCC = 5.0V, CL = 300pF on each of eight outputs.
I = ( 8 x 300 x 10
-12
)x (5.0V x 0.8)/ ( 20 x 10
-9
) = 480mA
(EQ. 4)
Assuming that all outputs change state at the same time and that dv/dt is constant;
I = CL ( V CC x 80% ) ----------------------------------tR/tF (EQ. 2) (EQ. 3)
This current spike may cause a large negative voltage spike on VCC, which could cause improper operation of the device. To filter out this noise, it is recommended that a 0.1F ceramic disc decoupling capacitor be placed between VCC and GND at each device, with placement being as near to the device as possible.
VCC P
VCC
P ALE MULTIPLEXED BUS ICC STB ADDRESS ADDRESS DATA IN N N P INTERNAL DATA
N
FIGURE 18. SYSTEM EFFECTS OF GATED INPUTS
4-276
82C82
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.5V to VCC +0.5V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical) JA JC CERDIP . . . . . . . . . . . . . . . . . . . . . . . . 75oC/W 18oC/W CLCC. . . . . . . . . . . . . . . . . . . . . . . . . . 85oC/W 22oC/W PDIP . . . . . . . . . . . . . . . . . . . . . . . . . . 75 N/A PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . 75 N/A Storage Temperature Range . . . . . . . . . . . . . . . . . .-65oC to +150oC Maximum Junction Temperature Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC Minimum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC (PLCC Lead Tips Only)
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range C82C82. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC I82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC M82C82 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
VCC = 5.0V 10%;
TA = 0oC to +70oC (C82C82); TA = -40oC to +85oC (I82C82); TA = -55oC to +125oC (M82C82) MAX 0.8 0.4 1.0 10.0 UNITS V V V V V V A A A IOH = -8mA, OE = GND IOH = -100A, OE = GND IOL = 8mA, OE = GND VIN = GND or VCC, DIP Pins 1-9, 11 VO = GND or VCC, OE VCC -0.5V DIP Pins 12-19 VIN = VCC or GND, VCC = 5.5V, Outputs Open TA = +25oC, VCC = 5V, Typical (See Note 2) TEST CONDITIONS C82C82, I82C82 (Note 1) M82C82 (Note 1)
SYMBOL VIH
PARAMETER Logical One Input Voltage
MIN 2.0 2.2
VIL VOH
Logical Zero Input Voltage Logical One Output Voltage
2.9 VCC -0.4V
VOL II IO
Logical Zero Output Voltage Input Leakage Current Output Leakage Current
-1.0 -10.0
ICCSB
Standby Power Supply Current Operating Power Supply Current
-
10
ICCOP
-
1
mA/MHz
NOTES: 1. VIH is measured by applying a pulse of magnitude = VIH min to one data input at a time and checking the corresponding device output for a valid logical "1" during valid input high time. Control pins (STB, OE) are tested separately with all device data input pins at VCC -0.4. 2. Typical ICCOP = 1mA/MHz of STB cycle time. (Example: 5MHz P, ALE = 1.25MHz, ICCOP = 1.25mA).
Capacitance
SYMBOL CIN COUT
TA = +25oC PARAMETER Input Capacitance Output Capacitance TYPICAL 13 20 UNITS pF pF TEST CONDITIONS Freq = 1MHz, all measurements are referenced to device GND
4-277
82C82
AC Electrical Specifications
VCC = 5.0V 10%; TA = 0oC to +70oC (C82C82); CL = 300pF (Note 1), Freq = 1MHz TA = -40oC to +85oC (I82C82); TA = -55oC to +125oC (M82C82) MIN 0 25 25 MAX 35 55 35 50 20 UNITS ns ns ns ns ns ns ns ns TEST CONDITIONS Notes 2, 3 Notes 2, 3 Notes 2, 3 Notes 2, 3 Notes 2, 3 Notes 2, 3 Notes 2, 3 Notes 2, 3
SYMBOL (1) (2) (3) (4) (5) (6) (7) (8) TIVOV TSHOV TEHOZ TELOV TIVSL TSLIX TSHSL TR, TF
PARAMETER Propagation Delay Input to Output Propagation Delay STB to Output Output Disable Time Output Enable Time Input to STB Setup Time Input to STB Hold Time STB High Time Input Rise/Fall Times
NOTES: 1. Output load capacitance is rated at 300pF for ceramic and plastic packages. 2. All AC parameters tested as per test circuits and definitions below. Input rise and fall times are driven at 1ns/V. 3. Input test signals must switch between VIL - 0.4V and VIH +0.4V.
Timing Waveforms
TR, TF (8) INPUTS 2.0V 0.8V TIVSL (5) STB TSHSL (7) OE TIVOV (1) OUTPUTS TSHOV (2) TSLIX (6)
TEHOZ (3) VOH -0.1V VOL +0.1V
TELOV (4) 2.4V 0.8V
Test Load Circuits
1.7V 0.6V 3.3V
150 OUTPUT
TEST POINT
300 OUTPUT
TEST POINT
300 OUTPUT
TEST POINT
300pF (NOTE)
50pF (NOTE)
50pF (NOTE)
TIVOV, TSHOV, TELOV
TEHOZ OUTPUT HIGH DISABLE
TEHOZ OUTPUT LOW DISABLE
NOTE: Includes stray and jig capacitance.
4-278
82C82 Burn-In Circuits
MD82C82 CERDIP
VCC F2 F2 F2 F2 F2 F2 F2 F2 F0 R1 R1 R1 R1 R1 R1 R1 R1 R1 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 R1 A A A A A A A A F1 R2 A R2 VCC C1
MR82C82 CLCC
VCC F2 F2 R3 R3 F2 R3 VCC/2 R3 C1
3 F2 F2 F2 F2 F2 R3 R3 R3 R3 R3 4 5 6 7 8 9 R3
2
1
20
19 18 17 16 15 14 R3 R3 R3 R3 R3 VCC/2 VCC/2 VCC/2 VCC/2 VCC/2
10
11 R3
12 R3
13 R3
F0
F1 VCC/2 VCC/2
NOTES: 1. VCC = 5.5 0.5V, GND = 0V. 2. VIH = 4.5V 10%. 3. VIL = -0.2V to 0.4V. 4. R1 = 47k 5%. 5. R2 = 2.0k 5%. 6. R3 = 4.2k 5%. 7. R4 = 470k 5%. 8. C1 = 0.01F minimum. 9. F0 = 100kHz 10%. 10. F1 = F0/2, F2 = F1/2.
4-279
82C82 Die Characteristics
DIE DIMENSIONS: 118.1 x 92.1 x 19 1mils METALLIZATION: Type: Si - Al Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 8kA 1kA WORST CASE CURRENT DENSITY: 2.00 x 105 A/cm2
Metallization Mask Layout
82C82
D11 D10 VCC DO0 D01
2
1
20
19
18
D12
3
17
DO2
16 D13 D14 4 5 15
DO3
DO4
14
DO5
D15
6 13 DO6
D16
7
8
9
10
11
12
D17
OE
GND
STB
DO7
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
4-280
This datasheet has been downloaded from: www..com Datasheets for electronic components.


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